A Wide-Operating Range Standard-Cell Based Memory in 28nm FD-SOI
- This study presents an energy-efficient ultra-low voltage standard-cell based memory in 28nm FD-SOI. The storage element (standard-cell latch) is replaced with a full- custom designed latch with 50 % less area. Error-free operation is demonstrated down to 450mV @ 9MHz. By utilizing body bias (BB) @ VDD = 0.5 V performance spans from 20 MHz @ BB=0V to 110MHz @ BB=1V.
Download full text files
Additional Services
| Author: | Oskar Andersson, Babak Mohammadi, Joachim Neves Rodrigues |
|---|---|
| URN: | urn:nbn:de:hbz:386-kluedo-43308 |
| Document Type: | Conference Proceeding |
| Language of publication: | English |
| Date of Publication (online): | 2016/03/14 |
| Year of first Publication: | 2016 |
| Publishing Institution: | Technische Universität Kaiserslautern |
| Date of the Publication (Server): | 2016/03/14 |
| Page Number: | 2 |
| Faculties / Organisational entities: | Kaiserslautern - Fachbereich Elektrotechnik und Informationstechnik |
| CCS-Classification (computer science): | B. Hardware / B.3 MEMORY STRUCTURES / B.3.0 General |
| DDC-Cassification: | 6 Technik, Medizin, angewandte Wissenschaften / 621.3 Elektrotechnik, Elektronik |
| Collections: | International Workshop on Emerging Memory Solutions |
| Licence (German): |  Standard gemäß KLUEDO-Leitlinien vom 30.07.2015 |