1 ML Wetting Layer upon Ga(As)Sb Quantum Dot (QD) Formation on GaAs Substrate Monitored with Reflectance Anisotropy Spectroscopy (RAS)
- III/V semiconductor quantum dots (QD) are in the focus of optoelectronics research for about 25 years now. Most of the work has been done on InAs QD on GaAs substrate. But, e.g., Ga(As)Sb (antimonide) QD on GaAs substrate/buffer have also gained attention for the last 12 years.There is a scientific dispute on whether there is a wetting layer before antimonide QD formation, as commonly expected for Stransky-Krastanov growth, or not. Usually ex situ photoluminescence (PL) and atomic force microscope (AFM) measurements are performed to resolve similar issues. In this contribution, we show that reflectance anisotropy/difference spectroscopy (RAS/RDS) can be used for the same purpose as an in situ, real-time monitoring technique. It can be employed not only to identify QD growth via a distinct RAS spectrum, but also to get information on the existence of a wetting layer and its thickness. The data suggest that for antimonide QD growth the wetting layer has a thickness of 1 ML (one monolayer) only.
Verfasser*innenangaben: | Henning Fouckhardt, Johannes Strassner, Thomas H. Löber, Christoph Döring |
---|---|
URN: | urn:nbn:de:hbz:386-kluedo-55699 |
Verlag: | Hindawi Verlag |
Dokumentart: | Wissenschaftlicher Artikel |
Sprache der Veröffentlichung: | Englisch |
Datum der Veröffentlichung (online): | 14.11.2018 |
Jahr der Erstveröffentlichung: | 2018 |
Veröffentlichende Institution: | Technische Universität Kaiserslautern |
Urhebende Körperschaft: | TU Kaiserslautern |
Datum der Publikation (Server): | 01.04.2019 |
Seitenzahl: | 7 |
Quelle: | https://www.hindawi.com/journals/aoe/2018/8908354/ |
Fachbereiche / Organisatorische Einheiten: | Kaiserslautern - Fachbereich Physik |
DDC-Sachgruppen: | 5 Naturwissenschaften und Mathematik / 500 Naturwissenschaften |
PACS-Klassifikation (Physik): | 80.00.00 INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
Sammlungen: | Open-Access-Publikationsfonds |
Lizenz (Deutsch): | Zweitveröffentlichung |